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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W Structure

Fig. 5

White-light-induced resistive switching memory characteristics. a I-V characteristics of a pristine device under negative bias. b I-V hysteresis with a small CC of 10 μA without external light. c RESET current characteristics are shown after white-light illumination. d I-V hysteresis characteristics are shown similar of (b) after light turned off condition

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