Fig. 6From: Resistive and New Optical Switching Memory Characteristics Using Thermally Grown Ge0.2Se0.8 Film in Cu/GeSex/W StructureData retention and read endurance after light illumination. a Both values of LRS after programming at CC of 1 and 10 μA are decreased when external white light is turned on with time duration of 5–10 s, which is owing to stronger Cu filament being formed. b Read pulse endurance of >105 cycles is observed after light illumination. c The device shows program/erase endurance by external light illumination of 10 s and negative erase voltageBack to article page