Fig. 1From: Submonolayer Uniformity of Type II InAs/GaInSb W-shaped Quantum Wells Probed by Full-Wafer Photoluminescence Mapping in the Mid-infrared Spectral RangeRoom temperature PL spectra from a InAs-based and b GaSb-based structures. The red solid line stands for a fit by an exponentially modified Gaussian. For comparison, a symmetric Gaussian function is plotted in dashed blue Back to article page