Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition

Table 1 The parameters that are used in the statistical simulation in this paper

Parameters used in the statistical simulation	Complementary crossbar [11, 12]	Twin crossbar [10]
HRS	100 MΩ	100 MΩ
LRS	10 kΩ	10 kΩ
Input voltage (V)	1	1
Number of iterations in the Monte Carlo simulation	1000	1000
Percentage variation in memristance	10–40 %	10–40 %
Inter-array correlation	0 or 1	0 or 1
Intra-array correlation	0 or 1	0 or 1