Skip to main content

Table 1 The parameters that are used in the statistical simulation in this paper

From: Comparative Study on Statistical-Variation Tolerance Between Complementary Crossbar and Twin Crossbar of Binary Nano-scale Memristors for Pattern Recognition

Parameters used in the statistical simulation Complementary crossbar [11, 12] Twin crossbar [10]
HRS 100 MΩ 100 MΩ
LRS 10 kΩ 10 kΩ
Input voltage (V) 1 1
Number of iterations in the Monte Carlo simulation 1000 1000
Percentage variation in memristance 10–40 % 10–40 %
Inter-array correlation 0 or 1 0 or 1
Intra-array correlation 0 or 1 0 or 1