Fig. 11
From: Conductance Quantization in Resistive Random Access Memory
Typical conductance quantization phenomenon observed in different structured devices under voltage sweeping mode. a Current jump observed in Ti/HfO2/TiN-structured memristor during RESET process. The inset diagram indicates the discrete resistance change due to quantum atomic reaction during RESET process [188]. b Conductance quantization observed in Nb/ZnO/Pt during SET process. [170] The inset shows the current–voltage curve in a larger voltage range from 0 to 4 V. c Progressive RESET process in Pt/HfO2/Pt devices [69]. The dashed line corresponds to the current–voltage curve of 1 G 0. d Detail of the current–voltage evolution of (c). Reproduced with permission