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Fig. 13 | Nanoscale Research Letters

Fig. 13

From: Conductance Quantization in Resistive Random Access Memory

Fig. 13

Quantized conductance observed in Ti/Ta2O5/Pt-structured VCM devices under voltage pulse operation mode [171]. a The value of conductance increases at steps of integer multiples of G 0 in the SET process under positive pulses with a width of 100 ns at interval of 2 s. b The value of conductance decreases at steps of integer multiples of G 0 in the RESET process under negative pulses with a width of 1 μs at an interval of 2 s. Reproduced with permission

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