Fig. 13From: Conductance Quantization in Resistive Random Access MemoryQuantized conductance observed in Ti/Ta2O5/Pt-structured VCM devices under voltage pulse operation mode [171]. a The value of conductance increases at steps of integer multiples of G 0 in the SET process under positive pulses with a width of 100 ns at interval of 2 s. b The value of conductance decreases at steps of integer multiples of G 0 in the RESET process under negative pulses with a width of 1 μs at an interval of 2 s. Reproduced with permissionBack to article page