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Fig. 22 | Nanoscale Research Letters

Fig. 22

From: Conductance Quantization in Resistive Random Access Memory

Fig. 22

Quantized conductance effect based on the quantum point contact model [186]. a Schematic illustration of a conducting filament with a lateral constriction of one or several atoms at the narrowest part of the filament. b-I Dispersion curves of the first four electronic subbands at the edge of the constriction. b-II Dispersion curves of the first three subbands at the center of the constriction where the confinement is stronger which leads to a spacing out of the subbands. c-I When the difference in chemical potential between the left and right reservoirs is small, both the left-going and right-going electron modes fall within the same subband. c-II When the difference in chemical potential between the two reservoirs is large, the left-going and right-going electron modes fall into different subbands. Reproduced with permission

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