Fig. 23
From: Conductance Quantization in Resistive Random Access Memory
Calculated band structures for crystalline m-HfO2 with O vacancies and the corresponding conductance [69]. a–d Crystalline m-HfO2 band structure with different oxygen vacancies separated by 4 a 0, 2 a 0, a 0, and a 0/2. a 0 is the length of the c-axis vector for the m-HfO2 primitive cell (0.5296 nm). e Conductance as a function of energy corresponding to a HfO2 matrix where one, two, or three O atom rows are removed. The rows subsequently removed are shown in the instate (marked as “1,” “2,” and “3”), where red and white spheres correspond to O and Hf atoms, respectively. Reproduced with permission