Fig. 5From: MOCVD Growth of High-Quality and Density-Tunable GaAs Nanowires on ITO Catalyzed by Au Nanoparticles Deposited by CentrifugationGaAs NW growth rate and spacing between NWs as a function of centrifugal time. The inset schematic explains the spacing of NWs and competition of the available adatomsBack to article page