Fig. 2
From: Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals
a Absorption/PL spectra of Mn-doped ZnSxSe1−x NCs at the indicated growth times before surface exchange/passivation. The excitation wavelength was 350 nm for the Mn PL due to the initial shorter absorption wavelengths (measured with a 500-nm longpass filter) and 330 nm for band-edge PL. Background rise in the UV region is due to organic species in the solution. b Integrated PL areas of band-edge, isolated Mn, and Mn-Mn emissions for NCs with different growth times before surface exchange/passivation. c Absorption/PL spectra of Mn-doped ZnSxSe1−x NCs after surface exchange/passivation, which took place after the indicated growth times. The full PL spectra were collected with a 350 nm excitation wavelength. d Growth-time dependence of Mn PL QYs and integrated band-edge PL areas for NCs after surface exchange/passivation. Spectra in a and c are offset for clarity. All PL spectra are normalized to the absorbance at the excitation wavelength