Fig. 3From: Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor NanocrystalsGrowth-time dependence of atomic percentages of Zn, Se, S, and Mn (a), average diameter (b), and average number of Mn per NC (normalized to set the maximum as 1) (c) of Mn-doped ZnSxSe1−x NCs before (on the left side of the dashed line) and after (on the right side of the dashed line) surface exchange/passivationBack to article page