Fig. 5
From: Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals
Band-edge PL integrated areas (normalized to set t = 0 min value as 1) and corresponding first absorption peak wavelengths of Mn-doped ZnSxSe1−x NCs during low-temperature annealing. The NCs were grown at 260 °C for 30 min (without surface exchange/passivation) and then cooled down to 150 °C and annealed for 30 min; then, they were heated to 180 and 210 °C and annealed for 30 min, respectively; finally, they were heated to 230 °C and annealed for 90 min. All PL spectra are normalized to the absorbance at the excitation wavelength