Fig. 6
From: Benefitting from Dopant Loss and Ostwald Ripening in Mn Doping of II-VI Semiconductor Nanocrystals
Size-selective precipitation results of Mn-doped ZnSxSe1−x NCs with 15 min growth time (without surface exchange/passivation). a Ratios of the integrated area of Mn PL (including Mn-Mn PL) to that of band-edge PL of NCs from continuous size-selective precipitation (plotted versus the corresponding first absorption peak position). The inset shows the absorption spectra normalized to the first absorption peak. b Integrated areas of band-edge (black squares) and dopant (red circles) PL of the same NCs from continuous size-selective precipitation and band-edge PL of undoped NCs (blue triangles) shown in Additional file 1: Figure S2a (plotted versus the corresponding first absorption peak position). Band-edge PL integrated areas of undoped NCs are used as an indicator of the size-dependent band-edge PL QY. All PL spectra are normalized to the absorbance at the excitation wavelength