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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

Fig. 5

Memory switching characteristics of electrodeposited GeSbTe devices. a Schematic of the vertical GeSbTe memory cells and the electrical characterisation setup. DC sweep of the (b) Ge0.5Sb1.0Te8.5, (c) Ge2.4Sb2.0Te5.6, (d) Ge3.5Sb1.0Te5.5 and (e) Ge5.0Sb3.5Te1.5 memory cells. f Threshold voltage (V th) as a function of the Ge content in the GeSbTe films

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