Fig. 7From: Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin FilmDistributions of (a) the resistances at both set and reset states and (b) resistance ratio for the four memory cells. Box plot shows the median, first and third quartiles. The whiskers show the data points that are beyond the quartiles by one and a half interquartile range. The small box shows the average valueBack to article page