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Table 1 EDX quantification results for GeSbTe films electrodeposited from different electrolytes

From: Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

[NnBu4][GeCl5] (vol. %)

[NnBu4][SbCl4] (vol. %)

[NnBu4]2[TeCl6] (vol. %)

Resultant compositions

8

30

62

Ge0.5Sb1.0Te8.5

25

25

50

Ge2.4Sb2.0Te5.6

46

18

36

Ge3.5Sb1.0Te5.5

40

40

20

Ge5.0Sb3.5Te1.5

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