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Table 1 EDX quantification results for GeSbTe films electrodeposited from different electrolytes

From: Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film

[NnBu4][GeCl5] (vol. %) [NnBu4][SbCl4] (vol. %) [NnBu4]2[TeCl6] (vol. %) Resultant compositions
8 30 62 Ge0.5Sb1.0Te8.5
25 25 50 Ge2.4Sb2.0Te5.6
46 18 36 Ge3.5Sb1.0Te5.5
40 40 20 Ge5.0Sb3.5Te1.5