Table 1 EDX quantification results for GeSbTe films electrodeposited from different electrolytes
From: Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film
[NnBu4][GeCl5] (vol. %) | [NnBu4][SbCl4] (vol. %) | [NnBu4]2[TeCl6] (vol. %) | Resultant compositions |
---|---|---|---|
8 | 30 | 62 | Ge0.5Sb1.0Te8.5 |
25 | 25 | 50 | Ge2.4Sb2.0Te5.6 |
46 | 18 | 36 | Ge3.5Sb1.0Te5.5 |
40 | 40 | 20 | Ge5.0Sb3.5Te1.5 |