Fig. 3From: Growth of Silicon Nanosheets Under Diffusion-Limited Aggregation EnvironmentsCross-sectional view of SiNSs. a–c SEM images of epitaxial SiNSs presenting the angle with the substrates depending on the orientation of the substrates. d–f Schematic images of the side projection view of the epitaxial SiNSs. This shows continuous atomic stacking has angles and an exposed surface that match those of the SiNSs in a–c Back to article page