Table 1 Material parameters of GaN and InN
From: Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells
E g | ε | e 33 | e 31 | e 15 | m e* | m h* | |
|---|---|---|---|---|---|---|---|
(eV, 300 K) | (C/m2) | (C/m2) | (C/m2) | (m 0) | (m 0) | ||
GaN | 3.4 | 10.28 | 0.73 | −0.49 | −0.40 | 0.20 | 1.60 |
InN | 0.7 | 14.61 | 0.73 | −0.49 | −0.40 | 0.11 | 1.63 |