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Table 1 Material parameters of GaN and InN

From: Enhanced Light Emission due to Formation of Semi-polar InGaN/GaN Multi-quantum Wells

  E g ε e 33 e 31 e 15 m e* m h*
(eV, 300 K)   (C/m2) (C/m2) (C/m2) (m 0) (m 0)
GaN 3.4 10.28 0.73 −0.49 −0.40 0.20 1.60
InN 0.7 14.61 0.73 −0.49 −0.40 0.11 1.63