Fig. 1From: Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade LasersHR-XRD spectra for the type II QWs with various As contents: ternary layer of GaIn(As)Sb with no arsenic (Sample A) and 10 % of As (Sample B). The shift of the envelope towards a larger angle indicating a strain reduction in the W-QW is clearly visibleBack to article page