Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

Table 1 Experimental and calculated fundamental type II transition energies for two samples with As content in W-design GaSb/AlSb/InAs/Ga_0.665In_0.335As_xSb_1 − x/InAs/AlSb/GaSb QWs equal to 0 and 10 %, respectively

Sample	As content (%)	Experiment (eV)	Calculated—nominal (eV)	Calculated—intermixing (eV)
A	0	0.386	0.395	0.388
B	10	0.417	0.388	0.415