Fig. 2From: Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation ProblemThe topography and current distributions of same GeSi QDs before (a, e) and after NHH etching for totally 2 (b, f), 7 (c, g), and 17 min (d, h), respectively. The sample was biased at −1.0 V and the tip was groundedBack to article page