Fig. 3From: Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation ProblemThe topography images of the same area after a HF etching, b HF etching followed by 2-min NHH etching, and c further HF dipping added after the NHH etching. The height profiles along the marked line are plotted in (d). The topography and current images of a same single QD corresponding to the above three cases measured at −2.0 V are presented in (e)Back to article page