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Fig. 5 | Nanoscale Research Letters

Fig. 5

From: Investigating the Composition and Conductance Distributions on Highly GeSi Mixed Quantum Dots and Inside Oxidation Problem

Fig. 5

The topography and current images of the same QDs before (a, e) and after NHH etching for totally 2 (b, f), 7 (c, g), and 17 min (d, h), respectively. Here, a 30-s HF dipping is added after each NHH etching. The height and current profiles along the marked line before and after each etching process are shown in (i) and (j), and the deduced composition profiles from (i) are given in (k). The surface composition distribution of the marked QD is shown as the inset in (k)

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