Fig. 3
From: Orthogonal Thin Film Photovoltaics on Vertical Nanostructures
a Double diode equivalent circuit model is selected in this work to allow a more realistic variation in the solar cell characteristics with change in the illumination. A key variability in here is the change in the ISC and VOC with illumination intensity. b Illustrates dependence of the VOC to ISC in a p-i-n type planar a-Si:H thin film solar cell. The experiment points are attained with the variation in the light intensity over three order of magnitude. Simulation using double diode model can better account for the recombination losses which are dominant at lower light intensities compared to single diode model