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Table 1 Resistivity and segment resistance of a number of different thin film materials used as the charge collection and scaffolding in vertical solar cells

From: Orthogonal Thin Film Photovoltaics on Vertical Nanostructures

Material

σ (Ω.m)

R (Ω)

Gold

2E-08

2E-02

Aluminum

2E-08

3E-02

ITO

1E-06

1

PEDOT:PSS

1E-05

10

n-type μc-Si

1E-04

100

n-type a-Si:H

0.1

1E + 05

p-type a-Si:H

10

1E + 07

Intrinsic silicon

640

8E + 08

Intrinsic ZnO

1000

1E + 09

  1. Segment resistance is calculated based on a 40-nm-long hollow cylinder with outer and inner diameters of 320 and 300 nm, respectively

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