# Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light

- Laipan Zhu
^{1, 2}Email authorView ORCID ID profile, - Yu Liu
^{1}, - Wei Huang
^{1}, - Xudong Qin
^{1}, - Yuan Li
^{1}, - Qing Wu
^{1}and - Yonghai Chen
^{1}Email author

**Received: **15 November 2015

**Accepted: **27 December 2015

**Published: **7 January 2016

## Abstract

The spin diffusion and drift at different excitation wavelengths and different temperatures have been studied in undoped InGaAs/AlGaAs multiple quantum well (MQW). The spin polarization was created by optical spin orientation using circularly polarized light, and the reciprocal spin Hall effect was employed to measure the spin polarization current. We measured the ratio of the spin diffusion coefficient to the mobility of spin-polarized carriers. From the wavelength dependence of the ratio, we found that the spin diffusion and drift of holes became as important as electrons in this undoped MQW, and the ratio for light holes was much smaller than that for heavy holes at room temperature. From the temperature dependence of the ratio, the correction factors for the common Einstein relationship for spin-polarized electrons and heavy holes were firstly obtained to be 93 and 286, respectively.

### Keywords

Spin diffusion Spin drift The circularly polarized light The reciprocal spin Hall effect## Background

Much attention has been given to semiconductor spintronics for the promising applications in information technology [1, 2]. One of the fundamental issues on semiconductor spintronics is the spin transport and its manipulation, including spin-related diffusion and drift. The anomalous circular photogalvanic effect (ACPGE) [3–5] and anomalous Hall effect (AHE) [6–10], which are derived from the same spin-orbit coupling (SOC) mechanisms (intrinsic or extrinsic) based on the reciprocal spin Hall effect (RSHE), open avenues to the study of the relationship between the diffusion and the drift of photoinduced spin-polarized electrons. According to [11], the ratio of the diffusion coefficient to the mobility of the photoinduced spin-polarized electrons has been measured to be 0.08 V in AlGaN/GaN heterostructure with the excitation wavelength of 1064 nm at room temperature. In this work, we focused on the spectrum and temperature dependence of the transport properties corresponding to interband transitions in an undoped InGaAs/AlGaAs multiple quantum well (MQW) in which a strong Rashba SOC had been demonstrated in previous studies [10, 12, 13].

*N*

_{eff}) flowing through the region of

*x*=0 has a Gaussian distribution [11, 13], i.e., \(N_{\text {eff}}=g\tau _{s}\frac {c}{\sigma }e^{-x^{2}/\sigma ^{2}}\), where

*g*,

*τ*

_{ s },

*c*,

*x*, and

*σ*are the generation rate of spin-polarized carriers, the spin relaxation time, an arbitrary constant, the spot coordinate along the

*x*axis, and the standard deviation of the Gaussian distribution, respectively. On the one hand, under normal incidence, the gradient of the spin density will induce a diffused spin polarization current (SPC): \(\textit {\textbf {q}}_{r}^{z}=-{D_{s}}\nabla _{r}\textit {n}^{z}(\textit {r})\), where

*D*

_{ s }is the spin diffusion coefficient of the photoinduced carriers,

*n*

^{ z }(

*r*) the spin density along the

*z*direction, and

*r*the radial direction in the

*x*−

*y*plane. According to the RSHE [3, 14], a transverse electric current (density) perpendicular to both the direction of the SPC and the direction of the spin polarization is produced, which can be expressed as \(\textit {j}=\gamma {e}\textit {\textbf {q}}_{r}^{z}\times \hat {\textit {z}}\), where

*e*,

*γ*are the elementary charge, the spin-orbit interaction coefficient based on RSHE, respectively. As a result, a swirling electric current will be induced around the light spot, which will further generate an observed ACPGE current

*j*

_{ACPGE}/

*e*=−

*γ*

*D*

_{ s }∇

*N*

_{eff}(shown in Fig. 1 c). On the other hand, when a circularly polarized light irradiates vertically on the sample, the flow of the spin-polarized carriers driven by the longitudinal electric field will also lead to a transverse AHE current which is also derived from the RSHE, as shown in Fig. 1 b [6–10]. And the AHE current can be expressed as

*j*

_{AHE}/

*e*=

*γ*

*μ*

_{ s }

*E*

*N*

_{eff}[11], where

*μ*

_{ s }is the spin mobility of the photoinduced carriers, and

*E*is the external electric field. Thus, the total spin-related photoinduced current along the two circle electrodes can be expressed as

where *j*
_{total} is equal to *j*
_{ACPGE+AHE}.

## Methods

The sample studied here is an undoped In _{0.15}
*Ga*
_{0.85} As/Al _{0.3}
*Ga*
_{0.7}As MQW grown by molecular beam epitaxy. A 200-nm buffer layer is initially deposited on (001) SI-GaAs substrate, followed by ten periods of 100-Å In _{0.15}
*Ga*
_{0.85}As/ 100-Å Al _{0.3}
*Ga*
_{0.7}As QWs. Then, a 500 Å Al _{0.3}
*Ga*
_{0.7}As layer and 100 Å GaAs cap layer are deposited. The sample is cleaved into a narrow strip along the GaAs [1\(\bar {1}\)0] direction with a width of 4 mm and a length of 12 mm. The geometry has been shown in Fig. 1
a, where two circle ohmic electrodes (whose radius are both 0.25 mm) with a distance of 2.5 mm and two strip ohmic electrodes (whose size are both 0.5 × 3 mm) with a distance of 10 mm were made along *y* and *x* direction, respectively, by indium deposition and annealed at about 420 °C in nitrogen atmosphere.

The experimental setup is described as follows. A modelocked Ti:sapphire laser with a repetition rate of 80 MHz serves as the radiation source. The incident light goes through a polarizer and a photoelastic modulator (PEM), of which the peak retardation is set to be *λ*/4, to yield a modulated circularly polarized light with a fixed modulating frequency at 50 KHz. By using an optical chopper with the rotation frequency of 223 Hz, the spectra of common photoinduced currents (*I*
_{PC}) are also measured for comparison, which show clearly the energy positions corresponding to 1hh-1e (the first valence subband of heavy holes to the first conduction subband) and 1lh-1e (the first valence subband of light holes to the first conduction subband) transitions (see Fig. 1
d). The Gaussian profile light beam irradiates vertically on the sample with a diameter of about 1.7 mm at the perpendicular bisector of the two circle electrodes. The external electric field applies to the strip electrodes. The photogalvanic currents are collected through the two circle electrodes by two lock-in amplifiers with the synchronization frequencies set to be 50 KHz and 223 Hz, respectively.

## Results and discussion

*N*

_{eff}=

*τ*

_{ e }

*N*

_{0}for electrons and

*N*

_{eff}=

*τ*

_{ hh }

*N*

_{0}for heavy holes, where \(N_{0}=g_{0}\frac {c}{\sigma }e^{-x^{2}/\sigma ^{2}}\) is a constant (where

*g*

_{0}is the generation rate for 1hh-1e transition),

*τ*

_{ e }is the spin relaxation time of electrons, and

*τ*

_{ hh }is the spin relaxation time of heavy holes. For 1lh-1e transition,

*N*

_{ eff }can be simplified as

*N*

_{eff}=

*τ*

_{ e }

*N*

_{1}for electrons and

*N*

_{eff}=

*τ*

_{ lh }

*N*

_{1}for light holes, where \(N_{1}=g_{1}\frac {c}{\sigma }e^{-x^{2}/\sigma ^{2}}\) is a constant (where

*g*

_{1}is the generation rate for 1lh-1e transition), and

*τ*

_{ lh }is the spin relaxation time of light holes. So, the total spin-polarized electric current corresponding to 1hh-1e and 1lh-1e can be expressed as

respectively.

for 1lh-1e transition. The Rashba effect which is stronger for the first valence band than that for the first conduction band and is stronger for the first light hole subband than that for the first heavy hole subband in *p*-type quantum wells has been demonstrated by several authors [16–18]. Supposing the situation for undoped MQW is similar to that for the *p*-type quantum wells. Thus, the reciprocal spin Hall coefficient (which is proportional to Rashba effect) of light holes (*γ*
_{
lh
}) is probably far larger than that of electrons (*γ*
_{
e
}). Assuming *μ*
_{
lh
} is comparable with *μ*
_{
e
}, while *D*
_{
lh
} is far smaller than *D*
_{
e
}, and *τ*
_{
e
} is at the same order with *τ*
_{
lh
}, only then can we get *μ*
_{
lh
}
*γ*
_{
lh
}
*τ*
_{
lh
}≫*μ*
_{
e
}
*γ*
_{
e
}
*τ*
_{
e
}. As a result, \(\left (\frac {D_{s}}{\mu _{s}}\right)_{1lh-1e}\) is smaller than \(\left (\frac {D_{s}}{\mu _{s}}\right)_{1hh-1e}\) (see Fig. 4). Around the 1hh-1e transition, the contribution to the ratio of the spin diffusion coefficient to the mobility of spin-polarized carriers is mainly from the 1hh-1e transition. With wavelength further decreasing, the contribution to the ratio from 1hh-1e transition became more and more weak, while the contribution from 1lh-1e became dominant. Therefore, the ratio remains almost a constant around 1hh-1e while it decreases sharply when decreasing the wavelength to 1lh-1e.

*T*

^{−2}, i.e.,

*τ*

_{ e }=

*A*

_{ e }

*T*

^{−2}, where

*A*

_{ e }is a constant, which is quiet different from the assumption of a narrow quantum wells in [2, 10, 19]; and the hole spin relaxation time is roughly proportional to

*T*

^{−1}, i.e.,

*τ*

_{ hh }=

*A*

_{ hh }

*T*

^{−1}, where

*A*

_{ hh }is a constant [20]. Assuming that \(\frac {D_{e}}{\mu _{e}}=\frac {\chi _{e}{k_{B}{T}}}{e}\) and \(\frac {D_{\textit {hh}}}{\mu _{\textit {hh}}}=\frac {\chi _{\textit {hh}}{k_{B}{T}}}{e}\), where

*χ*

_{ e }and

*χ*

_{ hh }are correction factors for the common Einstein relationship for the spin-polarized electrons and holes, respectively. At high temperatures (≥80 K), the mobility of GaAs/AlGaAs two-dimensional electron and hole gases are respectively proportional to

*T*

^{−2.4}and

*T*

^{−2}given by former studies [21, 22]. For spin-polarized electrons and holes, in order to simplify the discussion, we suppose the ratio of spin mobility between spin-polarized electrons and spin-polarized holes is proportional to

*T*(there were few relevant reports on the temperature dependence of spin mobility), i.e., \(\frac {\mu _{e}}{\mu _{\textit {hh}}}=\lambda _{0}T\), where

*λ*

_{0}is a constant. Then, Eq. 4 can be further expressed as

Ignoring the temperature dependence of *γ*
_{
e
} and *γ*
_{
hh
}, one can use Eq. 6 to fit the data in Fig. 7; and the correction factors for Einstein relationship for spin-polarized electrons and heavy holes are fitted as *χ*
_{
e
}=93 and *χ*
_{
hh
}=286, respectively. The factor of spin-polarized heavy holes is almost 3 times larger than that of spin-polarized electrons. According to the Einstein relationship for electron transport, the value of \(\frac {D}{\mu }\) is estimated to be about 0.026 V at room temperature, which is much smaller than the value of \(\frac {D_{s}}{\mu _{s}}\) we obtained in this work. We would like to clarify that \(\frac {D_{s}}{\mu _{s}}\) for spin transport is not necessarily the same as \(\frac {D}{\mu }\) for electron transport. The essential difference is that the Einstein relationship is derived based on the conservation law of electrons; however, spin is not conservative [11]. We believe that the Einstein relationship for spin should be different for different semiconductor materials.

## Conclusions

In conclusion, the spin diffusion and drift at different wavelengths and different temperatures have been studied in undoped InGaAs/AlGaAs MQW. By using the AHE and ACPGE which are all derived from RSHE, we obtained the ratio between the spin diffusion coefficient and the mobility of spin-polarized carriers. From the wavelength dependence of the ratio, we found that the spin diffusion and drift of holes became as important as electrons in this undoped MQW, and the ratio for light holes was much smaller than that for heavy holes at room temperature. From the temperature dependence of the ratio corresponding to the 1hh-1e transition, we believed the ratio is contributed by the combined effect of spin-polarized electrons and spin-polarized heavy holes. The correction factors for the common Einstein relationship for spin-polarized electrons and heavy holes are firstly obtained to be 93 and 286, respectively. It is worth noting that the AHE and ACPGE measurements used in this study are conducted under ambient conditions with a simple setup and operation, which provides a good method for the study of spin-related diffusion and drift.

## Declarations

### Acknowledgements

The work was supported by the 973 program (2012CB921304, 2013CB632805, and 2012CB619306) and the National Natural Science Foundation of China (61474114, 60990313, and 11574302).

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## Authors’ Affiliations

## References

- žutić I, Fabian J, Sarma SD (2004) Spintronics: fundamentals and applications. Rev Mod Phys 76(2): 323.View ArticleGoogle Scholar
- Wu MW, Jiang JH, Weng MQ (2010) Spin dynamics in semiconductors. Phys Rep 493(2): 61.View ArticleGoogle Scholar
- He XW, Shen B, Chen YH, Zhang Q, Han K, Yin CM, Tang N, Xu FJ, Tang CG, Yang ZJao (2008) Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in Al
_{ x }*Ga*_{1−x }N/GaN heterostructures at room temperature. Phys Rev Lett 101(14): 147402.View ArticleGoogle Scholar - Mei FH, Tang N, Wang XQ, Duan JX, Zhang S, Chen YH, Ge WK, Shen B (2012) Detection of spin-orbit coupling of surface electron layer via reciprocal spin Hall effect in InN films. Appl Phys Lett 101(13): 132404.View ArticleGoogle Scholar
- Duan JX, Tang N, Ye JD, Mei FH, Teo KL, Chen YH, Ge WK, Shen B (2013) Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg
_{0.2}*Zn*_{0.8}O/ZnO heterostructures at room temperature. Appl Phys Lett 102(19): 192405.View ArticleGoogle Scholar - Saitoh E, Ueda M, Miyajima H, Tatara G (2006) Conversion of spin current into charge current at room temperature: inverse spin-Hall effect. Appl Phys Lett 88(18): 182509.View ArticleGoogle Scholar
- Miah MI (2007) Observation of the anomalous Hall effect in GaAs. J Phys D: Appl Phys 40(6): 1659.View ArticleGoogle Scholar
- Yin CM, Tang N, Zhang S, Duan JX, Xu FJ, Song J, Mei FH, Wang XQ, Shen B, Chen YH, Yu JL, Ma H (2011) Observation of the photoinduced anomalous Hall effect in GaN-based heterostructures. Appl Phys Lett 98(12): 122104.View ArticleGoogle Scholar
- Yu JL, Chen YH, Jiang CY, Liu Y, Ma H, Zhu LP (2012) Observation of the photoinduced anomalous Hall effect spectra in insulating InGaAs/AlGaAs quantum wells at room temperature. Appl Phys Lett 100(14): 142109.View ArticleGoogle Scholar
- Zhu LP, Liu Y, Jiang CY, Yu JL, Gao HS, Ma H, Qin XD, Li Y, Wu Q, Chen YH (2014) Spin depolarization under low electric fields at low temperatures in undoped InGaAs/AlGaAs multiple quantum well. Appl Phys Lett 105(15): 152103.View ArticleGoogle Scholar
- Mei FH, Zhang S, Tang N, Duan JX, Xu FJ, Chen YH, Ge WK, Shen B (2014) Spin transport study in a Rashba spin-orbit coupling system. Sci Rep 4: 4030.Google Scholar
- Yu JL, Chen YH, Jiang CY, Liu Y, Ma H (2011) Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells. J Appl Phys 109(5): 053519.View ArticleGoogle Scholar
- Zhu LP, Liu Y, Jiang CY, Qin XD, Li Y, Gao HS, Chen YH (2014) Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells. J Appl Phys 115(8): 083509.View ArticleGoogle Scholar
- Shen SQ (2005) Spin transverse force on spin current in an electric field. Phys Rev Lett 95: 187203.View ArticleGoogle Scholar
- Ando K, Takahashi S, Ieda J, Kurebayashi H, Trypiniotis T, Barnes CHW, Maekawa S, Saitoh E (2011) Electrically tunable spin injector free from the impedance mismatch problem. Nat Mater 10(9): 655.View ArticleGoogle Scholar
- Gvozdic DM, Ekenberg U (2006) Superefficient electric-field-induced spin-orbit splitting in strained p-type quantum wells. Europhys Lett 73(6): 927.View ArticleGoogle Scholar
- Dai X, Zhang FC (2007) Light-induced Hall effect in semiconductors with spin-orbit coupling. Phys Rev B 76(8): 085343.View ArticleGoogle Scholar
- Winkler R (2003) Spin-orbit coupling effects in two-dimensional electron and hole systems, Vol. 191. Springer, Germany.View ArticleGoogle Scholar
- Malinowski A, Britton RS, Grevatt T, Harley RT, Ritchie DA, Simmons MY (2000) Spin relaxation in GaAs/Al
_{ x }*Ga*_{1−x }As quantum wells. Phys Rev B 62: 13034.View ArticleGoogle Scholar - Lü C, Cheng JL, Wu MW (2006) Hole spin dephasing in p-type semiconductor quantum wells. Phys Rev B 73(12): 125314.View ArticleGoogle Scholar
- Mendez EE, Price PJ, Heiblum M (1984) Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructures. Appl Phys Lett 45(3): 294.View ArticleGoogle Scholar
- Störmer HL, Gossard AC, Wiegmann W, Blondel R, Baldwin K (1984) Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa) As. Appl Phys Lett 44(1): 139.View ArticleGoogle Scholar