Fig. 2From: Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric LayersSurface morphologies of InN films doped with Mg at different source temperatures: a 300 °C, b 310 °C, c 320 °C, d 330 °C, and e 340 °C. f Root-mean-square (RMS) roughness versus Mg source temperaturesBack to article page