Fig. 4From: Ion-Beam-Directed Self-Ordering of Ga Nanodroplets on GaAs Surfaces a Nanosized GaAs strips fabricated by EBL and ICP etching. Localized nanodroplets forming on b GaAs nanostrips and c GaAs nanomesas under 0.93 nA normal incident ion beam bombardment for 1 min. The scale bars are 1 μmBack to article page