Table 1 Fitting parameters and positron trapping modes describing two-component reconstructed PAL spectra of Ga x (As0.4Se0.6)100−x alloys
From: Free-Volume Nanostructurization in Ga-Modified As2Se3 Glass
Sample, state | Fitting parameters | Positron trapping modes | |||||||
---|---|---|---|---|---|---|---|---|---|
τ 1 | τ 2 | I 2 | τ av | τ b | κ d | τ 2 −τ b | τ 2 /τ b | η | |
ns | ns | a.u. | ns | ns | ns−1 | ns | – | – | |
g-As2Se3 | 0.210 | 0.360 | 0.462 | 0.279 | 0.260 | 0.92 | 0.10 | 1.39 | 0.19 |
g-Ga1(As0.4Se0.6)99 | 0.216 | 0.371 | 0.408 | 0.279 | 0.261 | 0.78 | 0.11 | 1.42 | 0.17 |
g-Ga2(As0.4Se0.6)98 | 0.223 | 0.382 | 0.401 | 0.287 | 0.267 | 0.75 | 0.11 | 1.43 | 0.17 |
g-Ga3(As0.4Se0.6)97 | 0.211 | 0.365 | 0.457 | 0.281 | 0.261 | 0.91 | 0.10 | 1.39 | 0.19 |
g/c-Ga4(As0.4Se0.6)96 | 0.204 | 0.359 | 0.488 | 0.280 | 0.258 | 1.03 | 0.10 | 1.39 | 0.21 |
g/c-Ga5(As0.4Se0.6)95 | 0.207 | 0.362 | 0.462 | 0.279 | 0.258 | 0.95 | 0.10 | 1.40 | 0.20 |