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Fig. 2 | Nanoscale Research Letters

Fig. 2

From: A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs

Fig. 2

Steady-state mobility of hole carriers. a Sensitivity of the hole mobility to cross-section sizes and channel population. The mobility is generally degraded as channels become narrower. The mobility is also degraded as channels are inverted more strongly, and the degradation becomes particularly rapid when the density of inversion carriers (λ(ρ)) exceeds 106cm−1. b Variation of the mobility at selected cross-section sizes. At cross-sections ≤ 6 nm × 6 nm, the hole mobility becomes lower in [110] channels than [100] ones. The same pattern is also observed at larger cross-sections if channels are in the regime of strong inversion (λ(ρ)>106 cm−1)

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