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Fig. 3 | Nanoscale Research Letters

Fig. 3

From: A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs

Fig. 3

Mobility driven by phonon and surface roughness scattering. The mobility driven by the phonon scattering (PH) becomes higher in [110] nanowires than [100] ones, while the mobility driven by the surface roughness scattering (SRS) generally shows an opposite behavior. Although the PH-driven mobility does not show a clear sensitivity to channel population, the SRS-driven mobility is severely degraded as channels are inverted more strongly. The SRS-driven mobility also generally decreases as channels become narrower and eventually drops below the PH-driven mobility regardless of transport directions and channel population at cross-sections ≤ 5 nm × 5 nm

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