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Fig. 6 | Nanoscale Research Letters

Fig. 6

From: A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs

Fig. 6

Carrier volume density on channel cross-section. The volume density of hole carriers is plotted on a 3 nm × 3 nm (left) and a 8 nm × 8 nm cross-section (right) as a function of channel population. In general, [110] channels have broader distributions of carriers than [100] channels at the same population. Results of the 8 nm × 8 nm case clearly show that the corner effect also becomes stronger in [110] than [100] channels when channels are under strong inversion and broad enough to have clear band bending

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