Fig. 7From: Effect of Graphene Oxide on the Properties of Porous Silicon a Frequency dependence of the electrical capacitance (curves 1 and 2) and the resistance (curves 1' and 2') of the PS (1, 1') and PS–GO (2, 2') structures. b Nyquist plots of the PS (1) and PS–GO (2) structures. Inset: equivalent circuit diagram of PS-based structuresBack to article page