Fig. 1From: Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 TreatmentThe typical I–V switching characteristics of the Gd:SiO2 thin film RRAM devices for (a) the initial forming process and (b) In3+3d5/2 of ITO electrode in XPS spectraBack to article page