Fig. 2From: Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 TreatmentThe I–V switching curves of the Gd:SiO2 RRAM devices using SCF-treated ITO electrode for LRS/HRS state in set state. (a) ln(I/T2)-V1/2 curve fitting and (b) the reliability properties for different switching cycleBack to article page