Fig. 4From: Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 TreatmentThe electrical transferred mechanisms and metallic filament path diagram of the Gd:SiO2 RRAM devices using SCF-treated ITO electrode for a set state under the negative voltage and b reset state under the positive voltageBack to article page