Fig. 4
Main panel: Differential conductance-versus-voltage characteristics for a planar three-dimensional N-I-n-S(d-wave) structure with different thicknesses of the normal n interlayer in the tunneling regime (D I << 1); the angle γ = 45°; parameters α = 2d n Δ d /(ℏv F) and β = d n/l n Inset: Effect of the electron mean free path on the conductance spectra of a tunneling N-I-n-S(d-wave) structure