Fig. 5
From: X-ray Reciprocal Space Mapping of Graded Al x Ga1 − x N Films and Nanowires
a The depth evolution of the out-of-plane lattice parameter, c NW(t), and the in-plane lattice parameter, a NW(t), (inset) of the graded Al x Ga1 − x N NWs grown “free standing” (brown), on GaN(0001) (blue), and on Si(111) (red). Calculated \( \left(20\overline{2}5\right) \) RSMs of graded Al x Ga1 − x N NWs are shown in b for “free” growth, c for growth on GaN(0001), and in d for growth on Si(111). The dashed gray lines indicate the position of pseudomorphic (with respect to GaN) and fully relaxed Al x Ga1 − x N alloy for \( \left(20\overline{2}5\right) \) reflection