Fig. 4From: Direct Determination of 3D Distribution of Elemental Composition in Single Semiconductor Nanoislands by Scanning Auger MicroscopyConcentration depth profiles of a single p-cluster and wetting layer. Concentration depth profiles of a single p-cluster (a) and wetting layer (b) recorded on the surface of specimen А 2 with the buffer layer Si0.9Ge0.1 10 nm thick. The scaled-up beginning part of the Ge wetting layer concentration depth profile is shown at the inset (b)Back to article page