Fig. 8

Outline of ion etching crater geometry (a) and concentration depth profiles of B 1 specimen (b). (a) Outline of ion etching geometry and the formed crater: 1 – Si substrate, 2 – Si buffer layer, 3 – GeSi QD’s layer, 4 – Si cap layer, 5 – Al foil shield, 6 – Ar⁺ ion beam, 7 – ion beam scanning plane, 8 – ion beam scanning direction, 9 – etching crater bottom, 10 – ion beam scanning lines; (b) Concentration profiles of depth distribution of elements C, O, Ge and Si in the process of ion etching on B 1 specimen