Fig. 2
Comparisons of ID-VDS results at VGS varied from −5 to 3 V (step = 1 V) of the devices before and after a thermal ALD-grown AlN, b PECVD-deposited SiN passivation
Fig. 2 | Nanoscale Research Letters
Comparisons of ID-VDS results at VGS varied from −5 to 3 V (step = 1 V) of the devices before and after a thermal ALD-grown AlN, b PECVD-deposited SiN passivation