Fig. 2From: Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility TransistorsComparisons of ID-VDS results at VGS varied from −5 to 3 V (step = 1 V) of the devices before and after a thermal ALD-grown AlN, b PECVD-deposited SiN passivationBack to article page
