Fig. 6From: Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility TransistorsNormalized response ID when VGS pulsed from −6 to −2 V at VDS = 5 V of SiN-passivated sample, AlN-passivated sample, and unpassivated sampleBack to article page
