Skip to main content
Account

Table 1 Varieties of c axis of AlGaN/GaN layer after passivation

From: Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Position

SiN passivated (%)

AlN passivated (%)

NBD1

−0.33

≈0

NBD2

−0.33

≈0

NBD3

−0.20

≈0

Navigation