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Table 1 Varieties of c axis of AlGaN/GaN layer after passivation

From: Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors

Position SiN passivated (%) AlN passivated (%)
NBD1 −0.33 ≈0
NBD2 −0.33 ≈0
NBD3 −0.20 ≈0