Fig. 5From: Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well StructureTEM micrograph of InAs QD assembled on a InGaAs strain buffer layer. Lattice constants below and beside the InAs QD are compared indicated by line I and II (a), lattice constants below the InAs QD with different depth are compared indicated by line I and III in the enlarged image (b)Back to article page