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Table 3 Tested resist performance criteria

From: Step-and-Repeat Nanoimprint-, Photo- and Laser Lithography from One Customised CNC Machine

Performance criteria

AMO NIL MMS4

DELO-KATIOBOND OM VE 110707

Imprint pressure (kPa)

475

376

Curing dose (J/cm2)

8.0

0.4

Etched by O2 plasma

No

Yes

Si:resist etch ratio

1:1

4.87:1

Maximum iterations/soft-PDMS stamp

14

34

Radiation bleed (μm)

300

70

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