Table 4 Optimum machine parameters for photolithographic exposure of various popular photoresists using the UV-LED light source and a grating mask of 5 μm × 7 mm openings at 200 μm pitch, (inset: profile from dashed lines)
From: Step-and-Repeat Nanoimprint-, Photo- and Laser Lithography from One Customised CNC Machine
Resist | Microposit S1805 | Clariant AZ 4562 | MicroChem Nano SU-8 3005 |
|---|---|---|---|
LED current | 700 mA | 700 mA | 700 mA |
Dose | 135 mJ/cm2 | 404 mJ/cm2 | 359 mJ/cm2 |
resist thickness | 0.5 μm | 4.5 μm | 5.7 μm |
Line width | 13.0 μm | 7.3 μm | 26.0 μm |
Optical micrograph |
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