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Table 4 Optimum machine parameters for photolithographic exposure of various popular photoresists using the UV-LED light source and a grating mask of 5 μm × 7 mm openings at 200 μm pitch, (inset: profile from dashed lines)

From: Step-and-Repeat Nanoimprint-, Photo- and Laser Lithography from One Customised CNC Machine

Resist Microposit S1805 Clariant AZ 4562 MicroChem Nano SU-8 3005
LED current 700 mA 700 mA 700 mA
Dose 135 mJ/cm2 404 mJ/cm2 359 mJ/cm2
resist thickness 0.5 μm 4.5 μm 5.7 μm
Line width 13.0 μm 7.3 μm 26.0 μm
Optical micrograph
  1. Image scale bars = 200 μm