Table 1 Typical values of the forming/switching voltage and SET/RESET resistance for memristor devices with different HfO2 layer thickness
d HfO2, nm | Forming voltage, V | U Set, V | U Reset, V | R HRS, Ω | R LRS, Ω |
---|---|---|---|---|---|
3 | 1 ÷ 2.3 | 0.7 ÷ 1.2 | −1 ÷ −1.3 | 200 ÷ 6000 | 30 ÷ 200 |
4 | 1.3 ÷ 2.8 | 0.7 ÷ 1 | −1 ÷ −1.3 | 200 ÷ 5000 | 35 ÷ 200 |
5 | 2.4 ÷ 3.8 | 0.7 ÷ 1 | −0.95 ÷ −1.3 | 400 ÷ 5000 | 50 ÷ 400 |