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Fig. 10 | Nanoscale Research Letters

Fig. 10

From: Indium Antimonide Nanowires: Synthesis and Properties

Fig. 10

a SEM image of an InAsSb/GaSb TFET device with electrode configuration for reverse biased operation. See ref. [169]. b Colorized scanning electron microscopy image of a TFET. Note that the apparent NW diameter is here increased by the HfO2 film and that the gate overlap varies between devices. See ref. [170]

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