Fig. 10From: Indium Antimonide Nanowires: Synthesis and Properties a SEM image of an InAsSb/GaSb TFET device with electrode configuration for reverse biased operation. See ref. [169]. b Colorized scanning electron microscopy image of a TFET. Note that the apparent NW diameter is here increased by the HfO2 film and that the gate overlap varies between devices. See ref. [170]Back to article page