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Fig. 13 | Nanoscale Research Letters

Fig. 13

From: Indium Antimonide Nanowires: Synthesis and Properties

Fig. 13

I sd  − V gate at various source-drain voltages, within range of 10-60 mV. In the inset, scanning electron microscopic (SEM) image of fabricated device active region is depicted. The coupled arms of the log-periodic antenna recognized via e-beam lithography are correspondingly, associated to source and gate electrodes, while the current is examined with the aid of drain (D) one. See ref. [122]

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