Fig. 13From: Indium Antimonide Nanowires: Synthesis and Properties I sd − V gate at various source-drain voltages, within range of 10-60 mV. In the inset, scanning electron microscopic (SEM) image of fabricated device active region is depicted. The coupled arms of the log-periodic antenna recognized via e-beam lithography are correspondingly, associated to source and gate electrodes, while the current is examined with the aid of drain (D) one. See ref. [122]Back to article page