Fig. 5
From: Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
Impact of forming gas annealing on a SS and b DIBL as a function of NW diameters
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Fig. 5 | Nanoscale Research Letters
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From: Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
Impact of forming gas annealing on a SS and b DIBL as a function of NW diameters
