Fig. 5
From: Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around

Impact of forming gas annealing on a SS and b DIBL as a function of NW diameters
From: Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
Impact of forming gas annealing on a SS and b DIBL as a function of NW diameters