Fig. 5
From: Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
Impact of forming gas annealing on a SS and b DIBL as a function of NW diameters
Fig. 5 | Nanoscale Research Letters
From: Vertical Silicon Nanowire Field Effect Transistors with Nanoscale Gate-All-Around
Impact of forming gas annealing on a SS and b DIBL as a function of NW diameters
